English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 288Mb (8M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-TFBGA |
| 供应商设备包: | 144-FBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28HC256-90JCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS25LD040-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 100MHZ 8SOIC |
|
709349L9PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
M25PX16-VZM6TP TRMicron Technology |
IC FLSH 16MBIT SPI 75MHZ 24TPBGA |
|
7015S25PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
M25PE40S-VMW6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO W |
|
7134SA55JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
W25Q256FVEIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS42SM32160C-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
IS61NLP25672-200B1ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
AT45DB041A-TCRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 13MHZ 28TSOP |
|
MT48LC16M8A2TG-75 IT:G TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS42S16100F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
