English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 64Gb (8G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70261L25PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS61QDB22M18C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT48LC16M16A2P-7E IT:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V64M8FN-6 IT:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
M28W320HSB70ZB6EMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
MT28EW512ABA1HPC-1SIT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
M27W256B-80F6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
USBF4100T-I/SNVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
IS45S16800E-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
M95256-WMW6GSTMicroelectronics |
IC EEPROM 256KBIT SPI 10MHZ 8SO |
|
MT46H64M32LFCM-6 IT:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
AT49BV160C-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS61LF102418A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
