类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16320B-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
24FC128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
MT46V64M4TG-5B:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
7024S20J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
S30MS512R25TFW010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
M24C04-WBN6STMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
IDT71V2576YS150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M29W256GSH70ZS6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IDT71V3577YS85PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29GL256P11FFIS12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
FT24C64A-USG-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 800KHZ 8SOP |
|
MSM5118165F-60T3K-MTROHM Semiconductor |
IC DRAM 16MBIT PAR 50TSOP II |
|
S29GL256P11FFIS20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |