FIXED IND 10UH 1.6A 70 MOHM SMD
TVS DIODE 15V 24.4V DO214AA
IC DRAM 4GBIT 1866MHZ 200WFBGA
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 4Gb (128M x 32) |
内存接口: | - |
时钟频率: | 1.866 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 125°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H64M16HR-25E:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
M29W160ET70ZA6F TRMicron Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
MX25L25733FMI-10GMacronix |
IC FLASH 256MBIT SPI/QUAD 16SOP |
|
S34ML01G200TFI003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
AT49LV002N-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
S29GL128S11FFA020Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
71421SA25PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
71V35761S166BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT29C2G24MAABAHAMD-5 ITMicron Technology |
IC FLASH RAM 2GBIT PAR 130VFBGA |
|
CAT24C44LISanyo Semiconductor/ON Semiconductor |
IC NVSRAM 256B SPI 1MHZ 8DIP |
|
CY7C1426AV18-200BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V9089S12PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AS4C2M32D1-5TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |