类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71256SA15YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
BQ4013YMA-70Texas Instruments |
IC NVSRAM 1MBIT PAR 32DIP MODULE |
|
IS63LV1024L-10TLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
MT48LC4M16A2P-7E IT:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
CYDMX128A16-65BVXITCypress Semiconductor |
IC SRAM 128KBIT PAR 100VFBGA |
|
MT29F64G08AJABAWP-P:BMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
DS1265AB-70+Maxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
MT29F512G08CECBBJ4-37ES:B TRMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
MT47H128M8CF-25:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AT28C010-15TARoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
IDT71256L35YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W632GG8MB15I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
MT53D384M32D2DS-053 WT ES:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |