类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 8Mb (1M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT93C66AW-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
70V25L25PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IDT71V256SA10YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT48LC32M16A2TG-75:IT:CTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT29F32G08CBACAWP-IT:CMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
S29GL064S90FHA023Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W632GG8MB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
M25PX80-VMN6TPBA TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
S29GL064N90BAI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
IS42SM32160E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS46TR16640B-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CY7C1371D-133AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71T75602S100PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |