English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 800µs |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS2704G+T&RMaxim Integrated |
IC EEPROM 1.25K 1-WIRE 6TDFN |
|
MT25QL128ABA1EW7-MSITMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
AS4C256M8D3A-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
MT48H16M32L2B5-10Micron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
R1LV0816ASB-5SI#B0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
MT46V32M8FG-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
S30MS01GR25TFW000Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
MT48LC32M8A2TG-7E:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT93C66W-10SCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT47H512M4THN-37E:E TRMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
S29GL064N11TFIV60Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IS42S16160D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
STK14CA8-NF25TRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
