English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MX29LV800CTXEC-90GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
AT29LV1024-20TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TSOP |
|
W19B320ATB7HWinbond Electronics Corporation |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
AT49F040-90PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
IS66WVE4M16ALL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
S29GL256N11FFA02Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
IS42VM32800E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
JS28F320C3TD70Micron Technology |
IC FLSH 32MBIT PARALLEL 48TSOP I |
|
CY7C1399BN-15VXICypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
JS28F256P30B95B TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
THGBMHT0C8LBAIGToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 128GBIT EMMC 153WFBGA |
|
AT25040AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8MAP |
|
IS41LV16100C-50TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
