类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (8x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7015S17PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
MX29LV400CTMC-70GMacronix |
IC FLASH 4MBIT PARALLEL 44SOP |
|
W25Q64FVSSJF TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IDT71T75702S80PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT49BV162A-70TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
S25FL128P0XMFI011SCypress Semiconductor |
IC FLASH 128MBIT SPI 16SOIC |
|
IS25WD020-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 80MHZ 8WSON |
|
71V67803S166PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24128-BWMN6STMicroelectronics |
IC EEPROM 128KBIT I2C 1MHZ 8SO |
|
IDT71P79804S167BQIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IDT71V3558XS133PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
THGBMHG6C1LBAU6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT EMMC 153WFBGA |
|
IDT71P74804S200BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |