类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 13.75 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SST39SF040-45-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
![]() |
IS25LQ512A-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 512KBIT SPI/QUAD 8SOIC |
![]() |
M27W101-80N6TRSTMicroelectronics |
IC EPROM 1MBIT PARALLEL 32TSOP |
![]() |
AT27BV010-90VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
![]() |
7026L55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
![]() |
IS61QDB22M36A-250M3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
![]() |
AS4C128M16D3-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
![]() |
70V658S10DRRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
![]() |
IS43DR16128A-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
![]() |
W632GU6NB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
![]() |
IDT71V67903S75PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
![]() |
AT49F040A-55JU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
![]() |
IS61DDB22M18A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |