English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 750 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61QDB41M36-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IDT71V2576S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT45DB161D-MU-2.5Roving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 50MHZ 8VDFN |
|
IDT71V2556S100PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29RZ2B2DZZHHTB-18W.88FMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
|
R1EX25004ATA00I#S0Renesas Electronics America |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOP |
|
AT28C64E-20SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS61LV6416-12KL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
70261S55PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS66WV25616BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 4MBIT PAR 44TSOP II |
|
IDT71V67602S166BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IDT71V3578S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M24256-BWMN6TP/ASTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
