English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28HC256F-12PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IDT71V3557S85BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT49LV001-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT24C32AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8MAP |
|
25LC020A-H/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
MT48LC16M16A2BG-7E:D TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
AS4C16M16S-6TINAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71256SA15YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AT25160-10PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
MT29F128G08CBECBH6-12:C TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
70V9389L9PRFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
AT27C040-12JIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
DS2430APMaxim Integrated |
IC EEPROM 256B 1-WIRE 6TSOC |
