English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8, 64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C16M16MD1-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60FPBGA |
|
CY7C1462KV25-250BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
JS28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
MT53D384M32D2DS-053 WT ES:EMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
AT28HC64B-90JIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT53B384M32D2DS-062 AAT:BMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
IS25LD040-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 100MHZ 8SOIC |
|
MT28F640J3RG-115 XMET TRMicron Technology |
IC FLSH 64MBIT PARALLEL 56TSOP I |
|
S29PL127J60TAW130Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT27C4096-15JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
MT53B128M32D1NP-062 AIT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
IDT71V25761YSA200BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16100E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
