English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C64A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
BR93C76-WMN6TPROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SO |
|
24LC32A-I/MS16KVAORoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
AT25128-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8DIP |
|
MT45W1MW16BABB-706 WT TRMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
IDT71V35761S183BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
M45PE20S-VMN6TP TRMicron Technology |
IC FLASH 2MBIT SPI 75MHZ 8SO |
|
AT28HC256-90SARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
70V9289L9PRFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 128TQFP |
|
MT46H64M16LFBF-6 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
IS42S81600D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1543V18-375BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S34MS01G200TFV000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
