类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 50µs |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC2M32B2TG-6 IT:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
CAT28C16AGI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
MT29F16G08ABACAWP:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
AT29C020-70JURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS61LPD51236A-200TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42S16160B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54LFBGA |
|
IS42RM32400G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
R1WV6416RSD-5SI#B0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
|
M25P80-VMN3TPB TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
AS7C256B-15JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
M28W320HST70ZB6EMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
AT24C01A-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
JS28F320J3F75B TRMicron Technology |
IC FLASH 32MBIT PARALLEL 56TSOP |