类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (10x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL132K0XNFV043Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W948D6FBHX5JWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
MT46V32M16TG-5B IT:JAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
W19B320ABB7HWinbond Electronics Corporation |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
IDT71V3556S150BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT28C256E-15SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
70V9159L9PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
W631GG8KB12IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
IDT71T75802S100PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS61LPS51236A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
M29W800DB70N6T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
M29F160FT5AN6F2 TRMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1347S-133AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |