类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-LFBGA |
供应商设备包: | 90-LFBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AT27C256R-90RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
![]() |
IS43TR81280B-125JBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
![]() |
SST39SF040-45-4I-WHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
![]() |
MT41J128M16HA-15E:D TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
![]() |
AT45DQ161-MHD-YAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8UDFN |
![]() |
IDT71V3577SA85BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
![]() |
M27V160-100K1STMicroelectronics |
IC EPROM 16MBIT PARALLEL 44PLCC |
![]() |
W631GU6KB-11 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
![]() |
IDT71256L25YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
![]() |
R1RP0408DGE-2PI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
![]() |
MT48LC32M16A2P-75 L:C TRMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
![]() |
MT28F400B5SP-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
![]() |
AT45DQ161-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |