English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.342", 8.69mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43TR81280B-125JBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
SST39SF040-45-4I-WHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MT41J128M16HA-15E:D TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT45DQ161-MHD-YAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8UDFN |
|
IDT71V3577SA85BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M27V160-100K1STMicroelectronics |
IC EPROM 16MBIT PARALLEL 44PLCC |
|
W631GU6KB-11 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
IDT71256L25YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
R1RP0408DGE-2PI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT48LC32M16A2P-75 L:C TRMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT28F400B5SP-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
AT45DQ161-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
M95160-MN6PSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
