English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT27C020-70TIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
W25Q128FVPIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AT25020-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DIP |
|
IS61LPS25636A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
IDT71V124SA20PHI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
IDT71T75702S85BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
S29GL01GP11TFIR10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MTFC8GLVEA-1M WT TRMicron Technology |
IC FLASH 64GBIT MMC 153WFBGA |
|
MT45W1MW16BAFB-706 WTMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
GD5F2GQ4RF9IGYGigaDevice |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
7142LA20JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT53B2DADS-DCMicron Technology |
IC DRAM 16GBIT 200WFBGA |
|
IS42VM16160D-8BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
