English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 150 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V2558S166PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
NAND16GW3D2BN6EMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
IS45S16160D-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S34ML02G100TFI900SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 48TSOP I |
|
IDT71256SA25PZIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT48LC8M16LFTG-75M:G TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT29F128G08CFABBWP-12:B TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
M93C46-MN6STMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |
|
R1EX24032ATAS0I#S0Renesas Electronics America |
IC EEPROM 32KBIT I2C 8TSSOP |
|
CY62157DV30L-55ZSXETCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
AT27C2048-12PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40DIP |
|
IDT71V124SA12TYRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS25LP128-JGLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
