English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Strip |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (256 x 4) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2 µs |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-WFBGA, CSPBGA |
| 供应商设备包: | 6-UCSPR (1.68x1.68) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC4M16A2P-7E AIT:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY7C1425AV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT29F16G08ABACAWP-IT:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
SST39WF1601-90-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
IS43TR85120AL-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
70V9179L7PFG8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
IS46TR16256AL-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS66WV1M16DBLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PAR 48MINIBGA |
|
MT48LC2M32B2P-7:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT48LC2M32B2TG-5:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
25LC320AT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
M25PE40-VMW6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO |
|
AT24C256W-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
