类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (MLC) |
内存大小: | 256Gb (32G x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V35L20PFIRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
AT27BV256-12TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
AT49F001NT-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
24FC512-I/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
MT48H8M32LFB5-6:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
W25Q64JVZPJMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S25FL129P0XMFV011MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS42S16100C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71T75702S75PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT29F128G08CBCBBH6-6R:B TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
MT29F128G08AMCABH2-10IT:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
AT25640W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
MT49H8M36FM-5 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |