类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 120 ns |
电压 - 电源: | 2.7V ~ 3.6V, 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49F001NT-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
24FC512-I/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
MT48H8M32LFB5-6:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
W25Q64JVZPJMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S25FL129P0XMFV011MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS42S16100C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71T75702S75PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT29F128G08CBCBBH6-6R:B TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
MT29F128G08AMCABH2-10IT:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
AT25640W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
MT49H8M36FM-5 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
AT29LV256-15TC-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28TSOP |
|
CY7C1380S-167BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |