类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24FC04H-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
IS42S32800B-7TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
93C76A-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
AT25256B-MAPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 5MHZ 8UDFN |
|
AT27LV010A-70TURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
CY7C109B-15VCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT46V64M8P-75:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
M24256-BWMW6GSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
CY7C1143KV18-400BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY62127DV30L-55BVXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
MT44K32M18RB-125E:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
CY7C128A-35PCCypress Semiconductor |
IC SRAM 16KBIT PARALLEL 24DIP |
|
R1LV1616RBG-7SI#S0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48FBGA |