类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT44K16M36RB-093E:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
M27C64A-20F1STMicroelectronics |
IC EPROM 64KBIT PARALLEL 28CDIP |
|
S34ML04G200TFI503SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
7143SA55PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
IDT71V416YS10PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
FT24C04A-ESR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
MT29F2G01ABAGDSF-AAT:G TRMicron Technology |
IC FLASH 2GBIT SPI 16SO |
|
IS42S32400D-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IDT71V3577YS80PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29PL064J70BAI122Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CY7C1381D-100AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2576S133PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M95640-DRMC6TGSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8MLP |