类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FT24C04A-ESR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
MT29F2G01ABAGDSF-AAT:G TRMicron Technology |
IC FLASH 2GBIT SPI 16SO |
|
IS42S32400D-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IDT71V3577YS80PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29PL064J70BAI122Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CY7C1381D-100AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2576S133PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M95640-DRMC6TGSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8MLP |
|
IS61LPS51236A-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AS4C128M32MD2-18BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
MT45W4MW16BFB-708 L WT TRMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
W631GU8KB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
AT25320AN-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8SOIC |