English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C128-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
S34ML02G104TFI013SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 48TSOP I |
|
MT41K512M8RH-125 AIT:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IDT71V416VS12PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V65803S100PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT48H4M32LFB5-6 IT:KMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
S29GL128P90FFSS80Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CAT28C256LI15Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IS25WP128-RGLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
EDB4064B4PB-1D-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 216WFBGA |
|
AT27C2048-55VCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40VSOP |
|
70V24S15PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
PC28F640P33B85AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
