类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q128JVFJMWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS4C4M32S-7TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT29F2G16AABWP TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
IS42S16160J-6TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL032N90DAI020Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S34MS01G200BHB000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL |
|
AT27BV256-12RCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
W25X40VSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8SOIC |
|
MT46V16M16CY-5B XIT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
IDT71V67602S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL129P0XNFV013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT29F64G08TAAWP:A TRMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
AT25F1024N-10SI-2.7Roving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 20MHZ 8SOIC |