类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.4 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7140SA55PF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT46V16M16P-5B:K TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AT24C128W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
IDT70824L25PF8Renesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
IS61WV5128BLL-10BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
93C86BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
DS1230AB-120INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
MT46V16M16P-6T L:FMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AT27C010-45JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
STK22C48-NF25ITRCypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
AT49F001N-12PCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
MT48LC4M32LFB5-8:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
W25Q64FVSSIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |