类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q256FVBIPWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
25LC512-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
IS65WV1288DBLL-45TLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
AT27C516-45VIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 40VSOP |
|
CY7C1371C-100ACCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT46V32M16P-6T:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
JS28F128P30T85AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IDT71V67602S133BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
DS1225AD-70Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
CY7C1021CV33-8VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IDT71256L20Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT48LC16M8A2P-75:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
S34ML02G200BHI500SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |