English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 33 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 120 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
| 供应商设备包: | 32-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32800B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
PCF85102C-2P/03,11NXP Semiconductors |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
MT48LC2M32B2P-55:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS46TR16256BL-107MBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
M95640-MN6PSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8SO |
|
71V321L25J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS29GL256S-10DHV013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
PC28F128P30BF65B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
IS42RM16160E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
EDB2432BCPA-8D-F-DMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
MT48LC2M32B2TG-6A IT:JAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
W25X40AVDAIZWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 100MHZ 8DIP |
|
MT29RZ2B2DZZHHTB-18I.88F TRMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
