English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | StrataFlash™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 52 MHz |
| 写周期时间 - 字，页: | 65ns |
| 访问时间: | 65 ns |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-TBGA |
| 供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42RM16160E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
EDB2432BCPA-8D-F-DMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
MT48LC2M32B2TG-6A IT:JAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
W25X40AVDAIZWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 100MHZ 8DIP |
|
MT29RZ2B2DZZHHTB-18I.88F TRMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
|
N25Q256A13EF840EMicron Technology |
IC FLASH 256MBIT SPI 8VDFPN |
|
N25Q016A11ESCA0F TRMicron Technology |
IC FLASH 16MBIT SPI 108MHZ 8SO |
|
IDT71P72804S200BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS61LV25616AL-10BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
FT24C64A-ULR-TFremont Micro Devices |
IC EEPROM 64KBIT I2C SOT23-5 |
|
M24C08-WMN6TSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8SO |
|
70V9279S15PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT40A512M16JY-075E AIT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
