类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 288Mb (8M x 36) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 144-XFBGA |
供应商设备包: | 144-µBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT46V32M16CY-5B AIT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
W25Q64FWSSIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ 8SOIC |
![]() |
70V9289L9PRFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 128TQFP |
![]() |
AT49F002T-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
![]() |
AT25SF081-MHF-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8UDFN |
![]() |
93LC86A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
![]() |
7140LA100PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
![]() |
MT46V64M4BG-5B:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
![]() |
7025S45J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
![]() |
AS4C2M32D1-5BCNAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144BGA |
![]() |
MT46V64M8BN-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
IS42S16160B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54LFBGA |
![]() |
CY7C09189V-12AXCCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 100TQFP |