类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
S25FL132K0XBHB023Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 24BGA |
![]() |
NP8P128A13B1760EMicron Technology |
IC PCM 128MBIT PAR 64EASYBGA |
![]() |
MT46V16M16FG-6 L:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
![]() |
7008L35PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
![]() |
71024S25TYGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
![]() |
IS46TR16128AL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
![]() |
AT24C512-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
![]() |
S34MS01G200BHI900SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
![]() |
N25Q032A13ESFH0F TRMicron Technology |
IC FLSH 32MBIT SPI 108MHZ 16SOP2 |
![]() |
W632GG6KB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
![]() |
AS4C256M16D3L-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
![]() |
AT25160A-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
![]() |
70V07L25PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |