类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27C256R-70TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
M24C32-WMN6TSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8SO |
|
S34ML01G100TFI900SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
AT27BV256-90TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
AT29C010A-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT25256B-MAPDGV-ERoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 5MHZ 8UDFN |
|
7140SA20PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
IS62WV5128DALL-55T2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C057V-12AXCTCypress Semiconductor |
IC SRAM 1.152MBIT PAR 144TQFP |
|
MT44K32M18RB-093:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
RM3316-SNI-BAdesto Technologies |
IC EEPROM 256KBIT SPI 1MHZ 8SOIC |
|
IDT71V3557SA75BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48H8M32LFB5-75 IT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |