类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 250 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Through Hole |
包/箱: | 30-BCPGA |
供应商设备包: | 30-CPGA (16.51x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V06S55PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
MT47H128M8B7-37E:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
W948D6FBHX5EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
IS25WP016-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
M29W320EB70ZE6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
7024L20JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
71421LA25PFI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
IDT71016S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
DS1250YP-100+Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
MT46V32M16FN-75 L:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CAT24C44VI-GT3Sanyo Semiconductor/ON Semiconductor |
IC NVSRAM 256B SPI 1MHZ 8SOIC |
|
AT93C57-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
AT27C1024-12VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |