类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 250 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28F004B5VG-8 BETMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
IDT71T75702S85BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
W25Q32JVTCJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
AT29C040A-12JU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
MT29F1G08ABBDAHC:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
7015L20PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
AS4C32M16SM-7TCNAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT26DF321-SURoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI 66MHZ 8SOIC |
|
70V3599S166DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
CAT28C256G12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 32PLCC |
|
AT24C16AN-10SU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
CY7C1372DV25-167AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1041D-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |