类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 1Mb (32K x 32) |
内存接口: | Parallel |
时钟频率: | 83 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 3.135V ~ 3.63V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QU256ABA8E14-1SIT TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
AT28C256F-15SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
IS43DR81280B-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
RC48F4400P0TB0EJMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
W9412G6JH-5IWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
THGBMHG9C8LBAU8Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64GBIT EMMC 153WFBGA |
|
N25Q512A81GSF40GMicron Technology |
IC FLASH 512MBIT SPI 108MHZ 16SO |
|
JS28F128P30BF75AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IDT71V416L12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT25DF256-MAHNGU-YAdesto Technologies |
IC FLASH 256KBIT SPI 8UDFN |
|
IDT71V416VL12PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62128BLL-70ZXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
MT48H16M32L2F5-8 IT TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |