English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (4M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F16G08CBACAWP:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
AS4C256M16D3L-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT27LV512A-15JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT45W2MW16PAFA-70 ITMicron Technology |
IC PSRAM 32MBIT PARALLEL 48VFBGA |
|
7015L12PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
MT28F640J3RG-115 XMETMicron Technology |
IC FLSH 64MBIT PARALLEL 56TSOP I |
|
R1RP0408DGE-2PR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S29GL032N90FFIS23Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT29F384G08EBHBBJ4-3RES:B TRMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
|
GD5F2GQ4UEYIGYGigaDevice |
IC FLASH 2GBIT SPI/QUAD 8WSON |
|
W632GG6KB-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
MT46H16M32LFB5-5 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
IDT71V432S7PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
