类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (2M x 32) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1426AV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
7014S20JRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 52PLCC |
|
S25FL127SABMFIZ00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1049CV33-12ZSXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M24256-BRCS6TP/ASTMicroelectronics |
IC EEPROM 256KBIT I2C 8WLCSP |
|
AT27BV040-12JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
7130LA20TFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
70V657S10DRG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
DS1220Y-100+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
IDT71V124SA10Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT48LC2M32B2TG-55:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT48LC32M16A2P-75:C TRMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT28F400B5WG-8 BET TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |