English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 16Mb (1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 50-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 50-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24LC044-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
M29W128FL70ZA6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
71321LA45JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT93C46Y1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MAP |
|
AT27BV010-15VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
M93C86-MN6PSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8SO |
|
MT40A256M16GE-075E IT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IDT71V3579S65PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT24C512B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
IS45S32400E-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT46V32M8BG-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
AT45DB041A-JCRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 13MHZ 32PLCC |
|
IS42VM16800G-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
