English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 120 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
N25Q256A83E1241FMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
IS42SM32160C-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
MT29F4G08ABAFAWP-ITES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
SST25PF040C-40E/MF18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
MT46V32M8TG-75 IT:GMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MT47H64M8CB-37E:BMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
W25Q16DWZPIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
SST26VF016BA-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
IDT71V416L10BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
70V9279L9PRF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
R1EX24004ASAS0I#S0Renesas Electronics America |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |
|
IDT71V3559S75PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C019V-15ACCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
