类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29C040A-90TCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
S29GL512S11DHA020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
7037L20PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IDT7164S20YRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
AT27C1024-55VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
W25Q16FWZPIQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
MT48LC8M16A2TG-6A:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
AS4C16M32MS-7BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
CAT28C16AW-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AS7C256B-15PINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28DIP |
|
7027L25PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
N01L63W3AB25ISanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 48BGA |
|
AT49BV040-15TCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |