类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C08-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
MT48H32M16LFB4-75 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
MT46V128M4FN-75Z:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS42S16100E-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
IDT71V416VS12PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT41K128M16HA-15E IT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
709359L9PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
71V321L25TFI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT28C16-20JCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
IS42S16160G-6TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S25FL032P0XNFB003Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
70V05S25PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MT46H128M32L2KQ-48 IT:C TRMicron Technology |
IC DRAM 4GBIT PARALLEL 168WFBGA |