English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1258Y-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
AS4C4M16S-7TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS46TR85120BL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
DS2433SMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE 8SO |
|
S99GL512P10TFIR20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT29LV010A-20TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS42RM16800G-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IDT71V424L15PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
W632GG6MB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IS49NLS18160-33BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
SST38VF6404BT-70-5I-CDRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
CY7C1462AV33-167AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
S29CD016J0PQFM010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
