类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F800DB55N6Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
AT28C010-12TCRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
70V25L25J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
M29W400DT55ZE6EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
IS29LV032T-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
AT25128-10PCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 3MHZ 8DIP |
|
S34ML01G100TFI5C0SkyHigh Memory Limited |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
MT48LC2M32B2P-7:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
JS28F640P30BF75DMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
AT27LV512A-70TIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IS42S16100E-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
70V9099L12PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IDT71V3556S133BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |