English
简体中文
RES 8.66K OHM 1% 1/8W 0603
FIXED IND 5.6UH 217MA 1.6 OHM
SELF WRAP 1.5" X 50' BLACK/WHITE
IC DRAM 2GBIT PARALLEL 78FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS46TR16128BL-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
70V7519S166DRIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
CAT28F512G12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
IDT71V3557SA85BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
DS3050W-100#Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 256BGA |
|
MT46V16M16CY-5B AAT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
R1RW0408DGE-2PI#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
N25Q128A11EF840F TRMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
MT49H16M18CSJ-25 IT:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
S29GL256S11FHA023Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
IDT70P3517S233RMIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 576FCBGA |
|
AT45D041A-JCRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 15MHZ 32PLCC |
|
IS43TR85120BL-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |