类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (10.5x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B512M32D2DS-062 AAT:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
CY7C1372D-167AXITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
70V261S35PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AS4C512M8D3L-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT24C01A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CY62126ESL-45ZSXACypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT48LC32M8A2P-7E:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V64M8P-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AT45DB081D-SUAdesto Technologies |
IC FLASH 8MBIT SPI 66MHZ 8SOIC |
|
70V9269L12PRFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
MT29F4G08ABAFAWP-AATES:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
IS46TR16640BL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT48LC8M16A2B4-75:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |