类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 50-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 50-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C08N-10SIRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
M29DW323DT70ZE6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
MT48LC8M16LFB4-10 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS61LPD51236A-250B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
R1EX25008ATA00I#S0Renesas Electronics America |
IC EEPROM 8KBIT SPI 5MHZ 8TSSOP |
|
MT29F128G08CECABH1-10Z:AMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |
|
IS65WV12816BLL-55TA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
M29W800DB70ZE6F TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
EDY4016AABG-GX-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT49BV160DT-70CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 46CBGA |
|
S34ML02G200TFA003SkyHigh Memory Limited |
IC FLASH 2G PARALLEL |
|
N25Q064A13E1241EMicron Technology |
IC FLASH 64MBIT SPI 24TPBGA |
|
IS43TR16128D-093NBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |