English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 24-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 24-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M25P40-VMP6STMicroelectronics |
IC FLASH 4MBIT SPI 50MHZ 8VFDFPN |
|
IS66WV51216DBLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PAR 48MINIBGA |
|
S29CL032J0RFFM033Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
NAND512W3A2SN6EMicron Technology |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
AT25640N-10SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
MT46V64M8P-75 IT:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT44K16M36RB-125F:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
7026S55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
SST39LF040-45-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IS42RM32200K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
70V34S15PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
70V26L25JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
MT46V64M8BN-6:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
